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| BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current (t = 10 s) Total Dissipation at T amb 25 C o at T case 25 C St orage Temperature Max. Operating Junction Temperature o Value 40 40 15 4.5 0.5 0.36 1.2 -65 to 200 200 Unit V V V V A W W o o C C 1/6 November 1997 BSX20 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 146 486 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CES I CEX I BEX I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = 0) Collector Cut-off Current (V BE = -3V) Base Cut-off Current (V BE = -3V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = 20 V V CB = 20 V V CE = 15 V V CE = 40 V V CE = 15 V V CE = 15 V V EB = 4.5 V I C = 10 mA 20 T amb = 150 o C T amb = 55 C T amb = 55 o C T amb = 55 C o o Min. Typ . Max. 0.4 30 0.4 1 0.6 0.6 10 Un it A A A A A A A V V CER( sus) Collector-Emitter Sustaining Voltage (R BE = 10) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V CE(sat ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain I C = 10 mA 15 V I C = 10 mA I C = 100 mA I C = 10 mA I C = 10 mA I C = 100 mA IB = 1 mA IB = 10 mA IB = 0.3 mA IB = 1 mA IB = 10 mA 0.7 350 40 20 20 500 600 0.25 0.6 0.3 0.85 1.5 V V V V V mV V BE(s at) V BE(on) hFE I C = 30 A V CE = 20 V o T amb = 100 C I C = 10 mA V CE = 1 V I C = 100 mA V CE = 2 V I C = 10 mA V CE = 1 V o T amb = -55 C I C = 10 mA IE = 0 IC = 0 VCE = 10 V 60 fT C CBO C EBO t s t on Transition F requency Collector Base Capacitance Emitter Base Capacitance Storage Time Turn-on T ime MHz 4 4.5 pF pF ns V CB = 5 V V EB = 1 V 6 V CC = 10 V I C = 10 mA I B1 = -IB2 = 10 mA V CC = 3 V I B1 = 3 mA V CC = 6 V I B1 = 40 mA V CC = 3 V I B1 = 3 mA V CC = 6 V I B1 = 40 mA I C = 10 mA 13 12 I C = 100 mA 7 I C = 10 mA I B2 = -1.5 mA I C = 100 mA IB2 = -20 mA 18 21 ns ns ns ns t off Turn-off T ime Pulsed: Pulse duration = 300 s, duty cycle 1 % See test circuit 2/6 BSX20 Collector-emitter Saturation Voltage Base-emitter Saturation Voltage. DC Current Gain DC Current Gain Transition Frequency. 3/6 BSX20 Test circuit for tS. 4/6 BSX20 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 5/6 BSX20 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6 |
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